MIL-STD-750: Semiconductor Device Test Methods Explained

Spending nearly two decades qualifying discrete semiconductors for military and space applications, I’ve run countless tests according to MIL-STD-750. From power MOSFETs destined for satellite power systems to radiation-hardened rectifiers for missile guidance, this standard provides the test methods that prove a discrete semiconductor can survive the rigors of military and aerospace environments. If MIL-STD-883 is the bible for microcircuits, then MIL-STD-750 is its counterpart for discrete semiconductors.

This guide provides an in-depth look at MIL-STD-750—its structure, test methods, relationship with MIL-PRF-19500, and how it ensures the reliability of transistors, diodes, and other discrete devices in critical applications.

What is MIL-STD-750?

MIL-STD-750, officially titled “Test Methods for Semiconductor Devices,” establishes uniform methods and procedures for testing semiconductor devices suitable for use within military and aerospace electronic systems. The standard covers basic environmental, physical, and electrical tests to determine resistance to deleterious effects of natural elements and conditions surrounding military and space operations.

For the purpose of MIL-STD-750, the term “devices” includes transistors, diodes, voltage regulators, rectifiers, tunnel diodes, thyristors (controlled rectifiers), and other related discrete semiconductor parts. The standard is intended to apply only to semiconductor devices—it does not cover integrated circuits or microcircuits, which fall under MIL-STD-883.

Core Objectives of MIL-STD-750

The test methods and procedures in MIL-STD-750 serve three fundamental purposes:

The standard acknowledges that laboratory tests cannot perfectly replicate every operational environment. The test methods represent conditions that give results equivalent to field service, but the only true test for a specific application is actual service operation at that location.

Structure and Organization of MIL-STD-750

MIL-STD-750 is organized as a multipart test method standard, with test methods divided into five distinct series. This modular structure provides flexibility in referencing and revising specific test methods without affecting the entire document.

MIL-STD-750 Document Parts

Test method revisions are numbered consecutively using a period separator. For example, test method 1001.2 represents the second revision of method 1001. This allows individual test methods to be updated without changing the overall standard revision.

When referencing MIL-STD-750 in specifications or procurement documents, the basic standard designation should be used rather than individual part numbers. Existing documents referencing MIL-STD-750 do not need revision to reference the multipart format.

MIL-STD-750 Environmental Test Methods (1000 Series)

The 1000 series establishes uniform test methods for environmental testing of semiconductor devices, determining resistance to natural elements and conditions encountered in military operations.

Key Environmental Test Methods

MIL-STD-750 Burn-In Test Methods

Burn-in testing screens out devices with manufacturing defects that would cause early field failures. MIL-STD-750 provides separate burn-in methods for different device types:

Burn-in conditions typically require achieving a specified junction temperature (often 125°C or higher) for a defined duration, with the goal of accelerating any latent defects to the point of failure before devices ship to customers.

MIL-STD-750 Mechanical Test Methods (2000 Series)

The 2000 series covers mechanical characterization tests that evaluate physical construction, package integrity, and mechanical robustness of semiconductor devices.

Key Mechanical Test Methods

Constant Acceleration (Method 2006)

Constant acceleration testing subjects devices to centrifugal force (typically 20,000g or 30,000g) to detect structural and mechanical weaknesses not necessarily detected by other tests. This test identifies problems with die attach, wire bonds, and internal package integrity by subjecting all internal components to sustained high-g forces in multiple orientations.

PIND Testing (Method 2052)

Particle Impact Noise Detection identifies loose particles inside sealed semiconductor packages. Internal contamination—loose bond wires, solder balls, or foreign debris—can cause intermittent failures or permanent damage when particles migrate and create shorts. PIND testing applies controlled shock pulses while monitoring for characteristic acoustic signatures of particle impact.

MIL-STD-750 Transistor Electrical Tests (3000 Series)

The 3000 series provides electrical characterization test methods for bipolar transistors, MOSFETs, and Gallium Arsenide transistors.

Transistor Test Method Categories

Key Transistor Electrical Tests

Pulse Measurements in 3000 Series

Many transistor parameters must be measured under pulsed conditions to avoid device heating during measurement. MIL-STD-750 specifies:

• Pulse time (tp) ≤ 10 milliseconds
• Duty cycle ≤ 2 percent maximum
• Pulse duration long enough for accurate measurement but short enough to avoid heating

The specification sheet should state “pulsed test” when applicable, with specific pulse parameters defined.

Read more about Mil Standards:

MIL-HDBK-263: ESD Control Handbook & Implementation Guide

MIL-I-46058CMIL-I-46058C: Military Conformal Coating Specification Complete Guide

MIL-PRF-123: High-Reliability Ceramic Capacitor Military Standard

MIL-PRF-19500: Military Semiconductor Device Specification Explained

MIL-PRF-31032: The Definitive Guide to Military-Grade PCB Requirements

MIL-PRF-38534: Hybrid Microcircuits Military Specification Guide for Engineers

MIL-PRF-38535: The Complete Military Integrated Circuit Manufacturing Guide for Engineers

MIL-PRF-50884: Flexible & Rigid-Flex PCB Military Specification Explained

MIL-PRF-55110: Understanding Rigid Military PCB Specifications

MIL-PRF-55342: Military Chip Resistor Specifications & Requirements

MIL-PRF-55681: Military Ceramic Chip Capacitor Specification Guide

MIL-STD-1686: ESD Control Program Requirements for Military Electronics

MIL-STD-2000A: Military Soldering Standards for Electronic Assemblies

MIL-STD-202: Electronic Component Testing Methods & Procedures

MIL-STD-454: General Requirements for Military Electronic Equipment

MIL-STD-750: Semiconductor Device Test Methods Explained

MIL-STD-883: Complete Guide to Microelectronics Test Methods

Military PCB: Complete Guide to MIL-SPEC Design, Standards & Assembly

MIL-STD-750 Diode Electrical Tests (4000 Series)

The 4000 series provides electrical characterization test methods for diodes, microwave diodes, thyristors (controlled rectifiers), and tunnel diodes.

Diode Test Method Categories

Key Diode Electrical Tests

MIL-STD-750 High Reliability Space Applications (5000 Series)

The 5000 series contains specialized test methods for semiconductor devices intended for high-reliability space applications, addressing the unique requirements of satellite, spacecraft, and launch vehicle electronics.

5000 Series Test Methods

These methods define the complete flow from wafer acceptance through final qualification, ensuring devices meet the stringent requirements for space flight applications.

MIL-STD-750 and MIL-PRF-19500 Relationship

MIL-STD-750 defines test methods, while MIL-PRF-19500 establishes the performance and quality assurance requirements for discrete semiconductors. Understanding their relationship is essential for qualifying and procuring military-grade discrete devices.

Specification Framework

JAN Quality Levels

MIL-PRF-19500 defines four quality levels for encapsulated semiconductor devices, each with progressively more stringent screening and testing requirements:

For unencapsulated (die) products, two levels are available:

Radiation Hardness Assurance (RHA) Levels

For JANTXV and JANS devices requiring radiation hardness, eight RHA levels are designated by letters following the quality level:

MIL-STD-750 vs. MIL-STD-883 Comparison

Engineers often need to understand when to apply each standard:

The two standards share similar philosophies and many analogous test methods, but each is tailored to the specific characteristics and failure modes of its device category.

Laboratory Suitability Requirements

Prior to processing any semiconductor devices intended for military or space applications, the testing facility must be audited by DLA Land and Maritime, Sourcing and Qualification Division, and be granted written laboratory suitability status for each test method employed.

Processing devices at any facility without laboratory suitability status for the applicable test methods renders those devices non-compliant with MIL-STD-750. This requirement ensures testing is performed by qualified personnel using properly calibrated equipment and documented procedures.

Calibration Requirements

MIL-STD-750 mandates calibration and certification procedures in accordance with MIL-STD-45662 for plant standards and instruments used to measure or control production processes. Key calibration requirements include:

• Calibrating instrument accuracy at least 4× greater than the item being calibrated
• Traceability to National Institute of Standards and Technology (NIST)
• Correlation samples for measurements not directly traceable to NIST

Useful Resources for MIL-STD-750

For engineers and quality professionals needing access to MIL-STD-750 and related documents:

Current Document Status

Frequently Asked Questions About MIL-STD-750

What is the difference between MIL-STD-750 and MIL-STD-883?

MIL-STD-750 covers test methods for discrete semiconductor devices including transistors, diodes, rectifiers, thyristors, and tunnel diodes. MIL-STD-883 covers test methods for microcircuits including monolithic integrated circuits, hybrid microcircuits, and multichip modules. While both standards share similar test philosophies and have analogous environmental and mechanical tests, each is tailored to the specific characteristics of its device category. Discrete semiconductors are qualified under MIL-PRF-19500 using MIL-STD-750 test methods, while microcircuits are qualified under MIL-PRF-38535 using MIL-STD-883 test methods.

What do JAN, JANTX, JANTXV, and JANS quality levels mean?

These are quality level designations defined in MIL-PRF-19500 for discrete semiconductors tested per MIL-STD-750. JAN (Joint Army-Navy) is the basic military quality level. JANTX adds extended testing beyond JAN requirements. JANTXV adds visual inspection enhancements and more extensive screening. JANS is the highest level, intended for space flight applications, with the most comprehensive screening, inspection, and lot traceability requirements. Each successive level adds more stringent screening and testing, with JANS requiring complete 100% screening including burn-in, PIND, and additional inspection steps.

How does MIL-STD-750 relate to MIL-PRF-19500?

MIL-STD-750 defines how to perform tests, while MIL-PRF-19500 defines what requirements semiconductor devices must meet. MIL-PRF-19500 is the general specification for discrete semiconductors, and it invokes MIL-STD-750 test methods to verify device performance and quality. The individual MIL-PRF-19500 specification sheets (slash sheets) specify which MIL-STD-750 test methods apply to each device type and define the acceptance criteria. All testing of JAN devices must be performed at facilities with MIL-STD-750 laboratory suitability granted by the Qualifying Activity.

What is laboratory suitability and why does it matter?

Laboratory suitability is official certification that a testing facility has been audited by DLA Land and Maritime and approved to perform specific MIL-STD-750 test methods. Processing semiconductor devices at any facility without laboratory suitability for the applicable test methods makes those devices non-compliant. This requirement ensures that testing is performed by qualified personnel using properly calibrated equipment with documented procedures, providing confidence that test results are accurate and repeatable. Without laboratory suitability, test data cannot be used to support JAN device qualification or screening.

Which MIL-STD-750 test methods are destructive?

MIL-STD-750 classifies tests as either destructive or non-destructive. Destructive tests include die attach integrity, bond strength, certain thermal tests, and radiography (in some configurations). Non-destructive tests include most electrical parameter measurements, PIND, external visual inspection, and some thermal characterization methods. When the junction temperature exceeds the device maximum rated junction temperature during any test, that test is generally considered destructive except under transient surge conditions or approved accelerated screening. The classification matters for determining which devices can proceed through subsequent screening steps after testing.

Conclusion

MIL-STD-750 provides the comprehensive test method framework that enables qualification and screening of discrete semiconductors for military and aerospace applications. From the environmental stress tests that simulate deployment conditions to the electrical characterization tests that verify device performance, this standard ensures that transistors, diodes, and other discrete devices can withstand the demanding requirements of defense and space systems.

The relationship between MIL-STD-750 and MIL-PRF-19500 mirrors that of MIL-STD-883 and MIL-PRF-38535 for microcircuits—one defines the test methods, the other defines the requirements. Together with the quality level system (JAN through JANS), this framework provides a complete qualification pathway for discrete semiconductors used in applications where failure is not an option.

For engineers working with military-grade discrete semiconductors, familiarity with MIL-STD-750 is essential. Whether specifying burn-in conditions for power MOSFETs, reviewing thermal impedance data for rectifiers, or evaluating radiation hardness test results, the test methods defined in this standard provide the technical foundation for ensuring device reliability in the most demanding applications.